utc pcr406 scr utc unisonic technologies co. ltd 1 qw-r301-010,a description the utc pcr406 silicon controlled rectifiers are high performance planner diffused pnpn devices. these parts are intended for low cost high volume applications. to-92 1 1:cathode 2:gate 3:anode absolute maximum ratings parameters symbol test condition rating units repetitive peak off-state voltage pcr406-6 pcr406-5 v drm tj=40 to 125 c (r gk =1k ? ) 400 300 v on-state current it(rms) tc=40 c 0.8 a average on-state current it(av) half cycle=180, tc=40 c 0.5 a peak reverse gate voltage vg rm igr=10ua 1 v peak gate current igm 10us max. 0.1 a gate dissipation pg(av) 20ms max. 150 mw operating temperature tj -40~125 c storage temperature t stg -40~125 c soldering temperature t sld 1.6mm from case 10s max. 250 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min max unit off state leakage current idrm v drm(r gk =1k ? ), tj=125 c 0.1 ma off state leakage current idrm v drm(r gk =1k ? ), tj=25 c 1.0 a on state voltage vt it=0.4a it=0.8a 1. 4 2.2 v on state threshold voltage vt(to) tj=125 c 0.95 v on state slops resistance rt tj=125 c 600 m gate trigger current igt vd=7v 200 a gate trigger voltage vgt vd=7v 0.8 v holding current ih r gk =1k ? 5 ma latching current il r gk =1k ? 6 ma critical rate of voltage rise dv/dt vd=0.67*vdrm(r gk =1k ? ), tj=125 c v/ s
utc pcr406 scr utc unisonic technologies co. ltd 2 qw-r301-010,a parameter symbol test conditions min max unit critical rate of current rise dv/dt ig=10ma, dig/dt=0.1a/ s, tj=125 c a/ s gate controlled delay time tgd ig=10ma, dig/dt=0.1a/ s, 2.2 s commutated turn-off time tg tj=85 c, vd=0.67*vdrm, vr=35v, it=it(av) 200 s classification of i gt rank b c aa ab ac ad range 50-100 a 100-200 a 8-15 a 15-20 a 20-25 a 25-50 a
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